{"title":"混合信号集成电路设计中基片噪声耦合频率依赖特性的cad建模方法","authors":"H. Lan, Zhiping Yu, R. Dutton","doi":"10.1109/ISQED.2003.1194731","DOIUrl":null,"url":null,"abstract":"A simple, efficient CAD-oriented equivalent circuit modeling approach of frequency-dependent behavior of substrate noise coupling is presented. It is shown that the substrate exhibits significant frequency-dependent characteristics for high frequency applications using epitaxial layers on a highly doped substrate. Using the proposed modeling approach, circuit topographies consisting of only ideal lumped circuit elements can be synthesized to accurately represent the frequency response using y-parameters. The proposed model is well-suited for use in standard circuit simulators. The extracted model is shown to be in good agreement with rigorous 3D device simulation results.","PeriodicalId":448890,"journal":{"name":"Fourth International Symposium on Quality Electronic Design, 2003. Proceedings.","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":"{\"title\":\"A CAD-oriented modeling approach of frequency-dependent behavior of substrate noise coupling for mixed-signal IC design\",\"authors\":\"H. Lan, Zhiping Yu, R. Dutton\",\"doi\":\"10.1109/ISQED.2003.1194731\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simple, efficient CAD-oriented equivalent circuit modeling approach of frequency-dependent behavior of substrate noise coupling is presented. It is shown that the substrate exhibits significant frequency-dependent characteristics for high frequency applications using epitaxial layers on a highly doped substrate. Using the proposed modeling approach, circuit topographies consisting of only ideal lumped circuit elements can be synthesized to accurately represent the frequency response using y-parameters. The proposed model is well-suited for use in standard circuit simulators. The extracted model is shown to be in good agreement with rigorous 3D device simulation results.\",\"PeriodicalId\":448890,\"journal\":{\"name\":\"Fourth International Symposium on Quality Electronic Design, 2003. Proceedings.\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-03-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"24\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Fourth International Symposium on Quality Electronic Design, 2003. Proceedings.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2003.1194731\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fourth International Symposium on Quality Electronic Design, 2003. Proceedings.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2003.1194731","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A CAD-oriented modeling approach of frequency-dependent behavior of substrate noise coupling for mixed-signal IC design
A simple, efficient CAD-oriented equivalent circuit modeling approach of frequency-dependent behavior of substrate noise coupling is presented. It is shown that the substrate exhibits significant frequency-dependent characteristics for high frequency applications using epitaxial layers on a highly doped substrate. Using the proposed modeling approach, circuit topographies consisting of only ideal lumped circuit elements can be synthesized to accurately represent the frequency response using y-parameters. The proposed model is well-suited for use in standard circuit simulators. The extracted model is shown to be in good agreement with rigorous 3D device simulation results.