用微拉曼光谱测量硅膜导热系数

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI:10.1109/SOI.2010.5641397

Xi Liu, Xiaoming Wu, T. Ren

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引用次数: 6

摘要

提出了一种利用微拉曼光谱增强的稳态技术来测量SOI硅器件层的热导率。与传统的基于热敏电阻的测量方法相比，该测量方法具有两方面的改进:一是对环境干扰的鲁棒性，使测量系统误差从20%降低到10%。

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A metrology of silicon film thermal conductivity using micro-Raman spectroscopy

We present a steady state technique enhanced with micro-Raman spectroscopy to measure thermal conductivity of SOI silicon device layer. This metrology, comparing to conventional technique based on thermistor, exhibits two improvements: robustness against ambient disturbance, which leads to an error of 28%, and reduction on measurement system error from 20% to 10%.

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来源期刊

2010 IEEE International SOI Conference (SOI)

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