2.3 kVac 100 MHz多通道单片隔离器IC

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856832

Y. Kojima, M. Nemoto, S. Yukutake, T. Iwasaki, M. Amishiro, N. Kanekawa, A. Watanabe, Y. Takeuchi, N. Akiyama

{"title":"2.3 kVac 100 MHz多通道单片隔离器IC","authors":"Y. Kojima, M. Nemoto, S. Yukutake, T. Iwasaki, M. Amishiro, N. Kanekawa, A. Watanabe, Y. Takeuchi, N. Akiyama","doi":"10.1109/ISPSD.2000.856832","DOIUrl":null,"url":null,"abstract":"We have developed a multi-channel monolithic isolator IC that can provide 2.3 kVac isolation and 100 MHz signal transmission. This IC uses high voltage on-chip isolator technology using trench isolation with buried oxide on the SOI substrate and 0.4 /spl mu/m CMOS driver and receiver circuits. This technology enables to produce a 4-channel monolithic isolator with an area of 1.5 mm/sup 2/ and a consumption current of 0.5 mA per channel at a frequency of 50 MHz. We have also developed a one-chip modem interface IC that includes the multi-channel isolator and an analog front-end circuit.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"2.3 kVac 100 MHz multi-channel monolithic isolator IC\",\"authors\":\"Y. Kojima, M. Nemoto, S. Yukutake, T. Iwasaki, M. Amishiro, N. Kanekawa, A. Watanabe, Y. Takeuchi, N. Akiyama\",\"doi\":\"10.1109/ISPSD.2000.856832\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed a multi-channel monolithic isolator IC that can provide 2.3 kVac isolation and 100 MHz signal transmission. This IC uses high voltage on-chip isolator technology using trench isolation with buried oxide on the SOI substrate and 0.4 /spl mu/m CMOS driver and receiver circuits. This technology enables to produce a 4-channel monolithic isolator with an area of 1.5 mm/sup 2/ and a consumption current of 0.5 mA per channel at a frequency of 50 MHz. We have also developed a one-chip modem interface IC that includes the multi-channel isolator and an analog front-end circuit.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856832\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856832","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

我们开发了一种多通道单片隔离器IC，可以提供2.3 kVac隔离和100 MHz信号传输。该IC采用高电压片上隔离技术，采用SOI衬底上埋有氧化物的沟槽隔离和0.4 /spl mu/m CMOS驱动器和接收器电路。该技术能够生产面积为1.5 mm/sup 2/的4通道单片隔离器，每通道消耗电流为0.5 mA，频率为50 MHz。我们还开发了一个单片调制解调器接口集成电路，包括多通道隔离器和模拟前端电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

2.3 kVac 100 MHz multi-channel monolithic isolator IC

We have developed a multi-channel monolithic isolator IC that can provide 2.3 kVac isolation and 100 MHz signal transmission. This IC uses high voltage on-chip isolator technology using trench isolation with buried oxide on the SOI substrate and 0.4 /spl mu/m CMOS driver and receiver circuits. This technology enables to produce a 4-channel monolithic isolator with an area of 1.5 mm/sup 2/ and a consumption current of 0.5 mA per channel at a frequency of 50 MHz. We have also developed a one-chip modem interface IC that includes the multi-channel isolator and an analog front-end circuit.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

自引率

0.00%

发文量