Development and evaluation of SiC inverter using Ni micro plating bonding power module

This paper reports on evaluation of inverter system using silicon carbide (SiC) power module with a novel packaging technology of Ni micro plating bonding. The power module is developed to make the structure maximize the performance of SiC attracting attention in recent years. As a result, it was found that the developed inverter reduces the inverter loss and improves the efficiency of the entire inverter system as compared with in-vehicle product using Si-IGBT and the inverter consisting of the conventional package structure using SiC MOSFET. Moreover, it was confirmed that switching was possible even when the chip temperature exceeded 200°C, suggesting that the developed inverter can be driven under the high temperature environment.