{"title":"具有增强灵敏度的多端压力传感器","authors":"G. O. Coraucci, M. R. Finardi, F. Fruett","doi":"10.1109/SENSOR.2009.5285927","DOIUrl":null,"url":null,"abstract":"This paper describes the design, microfabrication and characterization of a CMOS compatible Multi-Terminal Pressure Sensor (MTPS). This sensor is an alternative to the pressure sensors based on the conventional silicon Wheatstone piezoresistive bridge (WB) or four-terminal piezotransducers. The layout of the MTPS is designed in such a way that the sensor sensitivity is effectively improved and the short-circuit effects, which are modeled by the Geometrical Correction Factor (G), can be minimized. The sensor design was supported by Finite Element Method (FEM). The MTPS sensitivity amounts to 4,8 mV/psi.","PeriodicalId":247826,"journal":{"name":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A Multi-Terminal Pressure Sensor with enhanced sensitivity\",\"authors\":\"G. O. Coraucci, M. R. Finardi, F. Fruett\",\"doi\":\"10.1109/SENSOR.2009.5285927\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the design, microfabrication and characterization of a CMOS compatible Multi-Terminal Pressure Sensor (MTPS). This sensor is an alternative to the pressure sensors based on the conventional silicon Wheatstone piezoresistive bridge (WB) or four-terminal piezotransducers. The layout of the MTPS is designed in such a way that the sensor sensitivity is effectively improved and the short-circuit effects, which are modeled by the Geometrical Correction Factor (G), can be minimized. The sensor design was supported by Finite Element Method (FEM). The MTPS sensitivity amounts to 4,8 mV/psi.\",\"PeriodicalId\":247826,\"journal\":{\"name\":\"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SENSOR.2009.5285927\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.2009.5285927","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Multi-Terminal Pressure Sensor with enhanced sensitivity
This paper describes the design, microfabrication and characterization of a CMOS compatible Multi-Terminal Pressure Sensor (MTPS). This sensor is an alternative to the pressure sensors based on the conventional silicon Wheatstone piezoresistive bridge (WB) or four-terminal piezotransducers. The layout of the MTPS is designed in such a way that the sensor sensitivity is effectively improved and the short-circuit effects, which are modeled by the Geometrical Correction Factor (G), can be minimized. The sensor design was supported by Finite Element Method (FEM). The MTPS sensitivity amounts to 4,8 mV/psi.