{"title":"利用(100)和(110)定向cmosfet对随机电报信号噪声现象中的中性陷阱和吸引陷阱进行综合研究","authors":"J. Chen, I. Hirano, K. Tatsumura, Y. Mitani","doi":"10.1109/VLSIT.2012.6242501","DOIUrl":null,"url":null,"abstract":"Neutral traps and attractive traps in random telegraph noise (RTN), on both (100)- and (110)-orientated CMOSFETs, are well distinguished and systematically studied for the first time, including both electron and hole traps. It is found that neutral traps energy distributions are higher than attractive traps and, most importantly, neutral traps caused much larger threshold voltage shifts (ΔVth_RTN) than attractive traps do, especially in (110)-nMOSFETs. Furthermore, based on obtained ΔVth_RTN in CMOSFETs on surface of various orientations, 3D structure optimizations are discussed in view of ΔVth_RTN suppression.","PeriodicalId":266298,"journal":{"name":"2012 Symposium on VLSI Technology (VLSIT)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Comprehensive investigations on neutral and attractive traps in random telegraph signal noise phenomena using (100)- and (110)-orientated CMOSFETs\",\"authors\":\"J. Chen, I. Hirano, K. Tatsumura, Y. Mitani\",\"doi\":\"10.1109/VLSIT.2012.6242501\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Neutral traps and attractive traps in random telegraph noise (RTN), on both (100)- and (110)-orientated CMOSFETs, are well distinguished and systematically studied for the first time, including both electron and hole traps. It is found that neutral traps energy distributions are higher than attractive traps and, most importantly, neutral traps caused much larger threshold voltage shifts (ΔVth_RTN) than attractive traps do, especially in (110)-nMOSFETs. Furthermore, based on obtained ΔVth_RTN in CMOSFETs on surface of various orientations, 3D structure optimizations are discussed in view of ΔVth_RTN suppression.\",\"PeriodicalId\":266298,\"journal\":{\"name\":\"2012 Symposium on VLSI Technology (VLSIT)\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 Symposium on VLSI Technology (VLSIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2012.6242501\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Symposium on VLSI Technology (VLSIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2012.6242501","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comprehensive investigations on neutral and attractive traps in random telegraph signal noise phenomena using (100)- and (110)-orientated CMOSFETs
Neutral traps and attractive traps in random telegraph noise (RTN), on both (100)- and (110)-orientated CMOSFETs, are well distinguished and systematically studied for the first time, including both electron and hole traps. It is found that neutral traps energy distributions are higher than attractive traps and, most importantly, neutral traps caused much larger threshold voltage shifts (ΔVth_RTN) than attractive traps do, especially in (110)-nMOSFETs. Furthermore, based on obtained ΔVth_RTN in CMOSFETs on surface of various orientations, 3D structure optimizations are discussed in view of ΔVth_RTN suppression.
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