65 nm寄生萃取的挑战与影响

7th International Symposium on Quality Electronic Design (ISQED'06) Pub Date : 2006-03-27 DOI:10.1109/ISQED.2006.133

K. Chow

{"title":"65 nm寄生萃取的挑战与影响","authors":"K. Chow","doi":"10.1109/ISQED.2006.133","DOIUrl":null,"url":null,"abstract":"Although industry-wide adoption of 65nm technology is in its infancy, major foundries have started developing design kits for the 65nm base. For designers, this means managing new and complex process variability and interconnect issues, relevant to specific design flows, using advanced parasitic extraction methodologies","PeriodicalId":138839,"journal":{"name":"7th International Symposium on Quality Electronic Design (ISQED'06)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The challenges and impact of parasitic extraction at 65 nm\",\"authors\":\"K. Chow\",\"doi\":\"10.1109/ISQED.2006.133\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Although industry-wide adoption of 65nm technology is in its infancy, major foundries have started developing design kits for the 65nm base. For designers, this means managing new and complex process variability and interconnect issues, relevant to specific design flows, using advanced parasitic extraction methodologies\",\"PeriodicalId\":138839,\"journal\":{\"name\":\"7th International Symposium on Quality Electronic Design (ISQED'06)\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"7th International Symposium on Quality Electronic Design (ISQED'06)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2006.133\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"7th International Symposium on Quality Electronic Design (ISQED'06)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2006.133","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

虽然65nm技术在整个行业的采用还处于起步阶段，但主要的代工厂已经开始开发65nm基础的设计套件。对于设计师来说，这意味着管理新的和复杂的过程可变性和互连问题，与特定的设计流程相关，使用先进的寄生提取方法

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The challenges and impact of parasitic extraction at 65 nm

Although industry-wide adoption of 65nm technology is in its infancy, major foundries have started developing design kits for the 65nm base. For designers, this means managing new and complex process variability and interconnect issues, relevant to specific design flows, using advanced parasitic extraction methodologies

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7th International Symposium on Quality Electronic Design (ISQED'06)

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