高密度，小于10 m欧姆R/sub dson/ 100伏n沟道场效应管，用于汽车应用

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856846

S. Sobhani, D. Kinzer, L. Ma, D. Asselanis

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引用次数: 8

摘要

本文介绍了高密度沟槽设计在100 VN电压等级下生产极低R/sub / mosfet的结果。R.A.产品110m /spl ω /。mm/sup 2/和125 m/spl Omega/。mm/sup 2/(取决于设计)在10v栅极是最低的行业报告。这项工作背后的动机是为了满足汽车应用中对这类mosfet日益增长的需求。

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High density, sub 10 m Ohm R/sub dson/ 100 volt N-channel FETs for automotive applications

Presented in this paper are the results of high-density trench designs in producing extremely low R/sub dson/ MOSFETs in the 100 VN voltage class. R.A. products of 110 m/spl Omega/.mm/sup 2/ and 125 m/spl Omega/.mm/sup 2/ (depending on design) at 10 V gate are the lowest reported in the industry. The incentive behind this work is to address the rising need of this class of MOSFETs in Automotive applications.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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