一种利用间隙敏感静电刚度变化效应的真空封装差分谐振加速度计

Byeungleul Lee, C. Oh, Soo Lee, Y. Oh, K. Chun
{"title":"一种利用间隙敏感静电刚度变化效应的真空封装差分谐振加速度计","authors":"Byeungleul Lee, C. Oh, Soo Lee, Y. Oh, K. Chun","doi":"10.1109/MEMSYS.2000.838542","DOIUrl":null,"url":null,"abstract":"This paper proposes an INS (Inertial Navigation System) grade, surface micro-machined differential resonant accelerometer (DRXL) by using the epitaxially grown thick polysilicon process. This proposed DRXL device produces a differential digital output upon an applied acceleration, and the principle is a gap-dependent electrical stiffness variation of the electrostatic resonator with torsion beam structures. Using this new operating concept, we designed, fabricated and tested the proposed device. The final device was fabricated by using the wafer level vacuum packaging process. The hermetic sealing cap structure was made of Pyrex 7740 glass with Ti layer as gettering material, and this cap wafer was anodically bonded with the polysilicon wafer at vacuum ambience. The measured Q-factor of the vacuum packaged DRXL was about 1/spl times/10/sup 3/ and the estimated inner pressure was about 200[mTorr]. We also achieved 73[Hz] output frequency change per unit G(9.8 m/s/sup c/) input with 12,716[Hz] nominal resonant frequency.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"48","resultStr":"{\"title\":\"A vacuum packaged differential resonant accelerometer using gap sensitive electrostatic stiffness changing effect\",\"authors\":\"Byeungleul Lee, C. Oh, Soo Lee, Y. Oh, K. Chun\",\"doi\":\"10.1109/MEMSYS.2000.838542\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes an INS (Inertial Navigation System) grade, surface micro-machined differential resonant accelerometer (DRXL) by using the epitaxially grown thick polysilicon process. This proposed DRXL device produces a differential digital output upon an applied acceleration, and the principle is a gap-dependent electrical stiffness variation of the electrostatic resonator with torsion beam structures. Using this new operating concept, we designed, fabricated and tested the proposed device. The final device was fabricated by using the wafer level vacuum packaging process. The hermetic sealing cap structure was made of Pyrex 7740 glass with Ti layer as gettering material, and this cap wafer was anodically bonded with the polysilicon wafer at vacuum ambience. The measured Q-factor of the vacuum packaged DRXL was about 1/spl times/10/sup 3/ and the estimated inner pressure was about 200[mTorr]. We also achieved 73[Hz] output frequency change per unit G(9.8 m/s/sup c/) input with 12,716[Hz] nominal resonant frequency.\",\"PeriodicalId\":251857,\"journal\":{\"name\":\"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-01-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"48\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.2000.838542\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2000.838542","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 48

摘要

采用外延生长的厚多晶硅工艺,提出了一种惯性导航级的表面微加工差分谐振加速度计。提出的DRXL装置在施加加速度时产生差分数字输出,其原理是具有扭转梁结构的静电谐振器的间隙相关电刚度变化。利用这种新的操作理念,我们设计、制造和测试了所提出的装置。最终器件采用晶圆级真空封装工艺制备。该密封帽结构采用高温7740玻璃,以Ti层为吸料材料,在真空环境下与多晶硅片阳极结合。实测的真空封装DRXL的q因子约为1/spl × /10/sup /,估算的内压约为200[mTorr]。我们还实现了每单位G(9.8 m/s/sup c/)输入的73[Hz]输出频率变化,标称谐振频率为12,716[Hz]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A vacuum packaged differential resonant accelerometer using gap sensitive electrostatic stiffness changing effect
This paper proposes an INS (Inertial Navigation System) grade, surface micro-machined differential resonant accelerometer (DRXL) by using the epitaxially grown thick polysilicon process. This proposed DRXL device produces a differential digital output upon an applied acceleration, and the principle is a gap-dependent electrical stiffness variation of the electrostatic resonator with torsion beam structures. Using this new operating concept, we designed, fabricated and tested the proposed device. The final device was fabricated by using the wafer level vacuum packaging process. The hermetic sealing cap structure was made of Pyrex 7740 glass with Ti layer as gettering material, and this cap wafer was anodically bonded with the polysilicon wafer at vacuum ambience. The measured Q-factor of the vacuum packaged DRXL was about 1/spl times/10/sup 3/ and the estimated inner pressure was about 200[mTorr]. We also achieved 73[Hz] output frequency change per unit G(9.8 m/s/sup c/) input with 12,716[Hz] nominal resonant frequency.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信