600 v, 10-A沟槽双极结二极管的静态和动态特性

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856814

B. You, A.Q. Huang, J. Sin, A. Xu

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引用次数: 2

摘要

本文采用自对准沟槽工艺制备了600 v, 10 a的TBJDs，并对其进行了实验表征。研究了TBJDs在室温和高温下的静态和动态特性。与p-i-n二极管相比，TBJDs不仅具有优越的反向恢复特性，而且在高温下具有更低的导通电压降和相同的反向泄漏电流水平。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Static and dynamic characteristics of 600-V, 10-A trench bipolar junction diodes

In this paper, 600-V, 10-A TBJDs were fabricated utilizing a self-aligned trench process, and characterized experimentally. The static and dynamic characteristics of the TBJDs were investigated at both room and elevated temperatures. Compared to the p-i-n diode, the TBJDs were shown to have not only superior reverse recovery characteristics, but also lower on-state voltage drops and the same reverse leakage current levels at elevated temperature.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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