表面通道电荷耦合器件的动态信号模型

ICM 2001 Proceedings. The 13th International Conference on Microelectronics. Pub Date : 1900-01-01 DOI:10.1109/ICM.2001.997508

S. Bri, L. Zenkouar, M. Yebari

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引用次数: 0

摘要

ccd广泛应用于超大规模集成电路(VLSI)的特殊应用中。在本文中，我们研究了在外加电压控制下相邻MOS电容之间的转移电荷耦合器件(CCDs)。为了显示电极间电位空间的作用，开发了一套适合不同CCD技术的数值程序。

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Dynamic signal model in the surface channel charge coupled devices

The CCDs are used widely in special applications for very large scale integration (VLSI). In this paper, we have studied transfer charges coupled devices (CCDs) between adjacent MOS capacities under the control of an externally applied voltage. In order to show the role of the potential space inter-electrodes, a numerical program was developed and adapted to different CCD technologies.

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ICM 2001 Proceedings. The 13th International Conference on Microelectronics.

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