陷阱对GaAs mesfet I-V特性影响的建模

Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI:10.1109/IEDM.1995.499332

C. Fiegna, F. Filicori, G. Vannini, F. Venturi

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引用次数: 11

摘要

本文通过测量和基于物理的器件模拟研究了深能级陷阱对GaAs mesfet大信号I-V特性的影响;结果清楚地表明，脉冲I-V测量足以表征大信号交流器件的工作，并为电路级大信号MESFET模型提供良好的物理基础。

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Modeling the effects of traps on the I-V characteristics of GaAs MESFETs

This paper provides an investigation on the effects of deep level traps on the large-signal I-V characteristics of GaAs MESFETs by means of measurements and physics-based device simulations; results give clear indications that pulsed I-V measurements are sufficient in order to characterize large-signal AC device operation and provide a good physical basis for circuit-level large signal MESFET models.

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Proceedings of International Electron Devices Meeting

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