基于 NEMS 的逻辑和存储电路

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI:10.1109/IRPS.2012.6241823

J. Jang, G. Amaratunga

{"title":"基于 NEMS 的逻辑和存储电路","authors":"J. Jang, G. Amaratunga","doi":"10.1109/IRPS.2012.6241823","DOIUrl":null,"url":null,"abstract":"Carbon nanotube (CNT) based nano electromechanical system (NEMS) were developed to apply to the logic and the memory circuit. The electrical `on-off' behavior induced by the mechanical movements of CNTs can promise low power consumption in circuit with very low level leakage current. Additionally, the unique vertical structure of nanotubes allows high integration density for devices.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"NEMS based logic and memory circuits\",\"authors\":\"J. Jang, G. Amaratunga\",\"doi\":\"10.1109/IRPS.2012.6241823\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Carbon nanotube (CNT) based nano electromechanical system (NEMS) were developed to apply to the logic and the memory circuit. The electrical `on-off' behavior induced by the mechanical movements of CNTs can promise low power consumption in circuit with very low level leakage current. Additionally, the unique vertical structure of nanotubes allows high integration density for devices.\",\"PeriodicalId\":341663,\"journal\":{\"name\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2012.6241823\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2012.6241823","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

基于碳纳米管(CNT)的纳米机电系统(NEMS)主要应用于逻辑电路和存储电路。由碳纳米管的机械运动引起的电气“开关”行为可以在极低泄漏电流的电路中实现低功耗。此外，纳米管独特的垂直结构允许器件的高集成密度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

NEMS based logic and memory circuits

Carbon nanotube (CNT) based nano electromechanical system (NEMS) were developed to apply to the logic and the memory circuit. The electrical `on-off' behavior induced by the mechanical movements of CNTs can promise low power consumption in circuit with very low level leakage current. Additionally, the unique vertical structure of nanotubes allows high integration density for devices.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2012 IEEE International Reliability Physics Symposium (IRPS)

自引率

0.00%

发文量