S. Z. M. Saad, T. C. Lik, M. A. Othman, P. Holger, S. H. Herman
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An improved P+/N diode leakage current in BiCMOS technologies with fluorine co-implant
Fluorine (F) is a co-implant species known to have numbers of beneficial effects to the semiconductor device. In this study, we demonstrate the effect of fluorine to the p+/n-junction leakage current improvement in BiCMOS technologies. In which, fluorine and boron fluoride (BF2) were used instead of fluorine-boron (F-B) or BF2 only. By changing the implant sequence at P+ region from F followed by BF2 to BF2 followed by fluorine (BF2-F), the leakage current improved by one decade with a higher breakdown voltage also observed in the reverse sequence, BF2-F.
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