静电N/MEM继电器拉入稳定裕度优化的设计考虑

G. Usai, L. Hutin, J. L. Muñoz-Gamarra, T. Ernst, M. Vinet, P. Feng
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引用次数: 0

摘要

本研究旨在为静电驱动微纳机电继电器的设计提供指导,该继电器在电源电压VDD附近具有广泛的工作裕度。虽然为了实现低VDD,人们主要关注最小化第一次拉入电压(Vpi)是很诱人的,但应该特别注意所谓的灾难性拉入(Vcpi),这相当于可移动电极在足够大的超速驱动下塌陷到致动电极上。基于解析和有限元分析(FEA)建模,我们研究了定义为(Vcpi-Vpi)的功能裕度与驱动电极相对于活动结构的尺寸和位置的依赖关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design considerations for optimization of pull-in stability margin in electrostatic N/MEM relays
This study aims at providing guidelines for designing electrostatically-actuated micro/nanoelectromechanical relays with a broad operating margin around the supply voltage VDD. Whereas it is tempting to focus mainly on minimizing the first pull-in voltage (Vpi) in order to enable a low VDD, special attention should be paid to the so-called catastrophic pull-in (Vcpi), which corresponds to the movable electrode collapsing onto the actuating electrode for a sufficiently large overdrive. Based on analytical and finite element analysis (FEA) modeling, we study the dependence of a functionality margin defined as (Vcpi-Vpi) versus the size and position of the actuating electrode with respect to the movable structure.
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