硅片直接键合制备的薄体GaSb-OI - p -mosfet

26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI:10.1109/ICIPRM.2014.6880566

K. Nishi, M. Yokoyama, H. Yokoyama, M. Takenaka, S. Takagi

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引用次数: 1

摘要

我们已经演示了薄体绝缘体上gasb (GaSb-OI) p- mosfet在直接晶圆封装(DWB)制造的硅晶圆上的操作。我们开发了一种晶圆级转移技术，用于将超薄GaSb层转移到硅晶圆上。我们发现薄体GaSb- oi p- mosfet的空穴迁移率取决于GaSb厚度和GaSb通道表面条件。

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Thin body GaSb-OI P-mosfets on Si wafers fabricated by direct wafer bonding

We have demonstrated the operation of thin body GaSb-on-insulator (GaSb-OI) p-MOSFETs on Si wafers fabricated by direct wafer boding (DWB). We have developed a wafer-scale transfer technique for transferring ultrathin GaSb layers to Si wafers. We have found that the hole mobility of the thin body GaSb-OI p-MOSFETs depends on the GaSb thickness and the GaSb channel surface condition.

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26th International Conference on Indium Phosphide and Related Materials (IPRM)

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