低钾自旋聚合物与Cu在Damascene中的集成

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854288

W. Chang, W. Chiou, L.J. Li, L. Chao, S. Jang, C. Yu, M. Liang

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引用次数: 1

摘要

本文研究了低钾自旋聚合物(SOP, k2.7)与Cu在damascene中通过第一通道和第二通道图案化的集成。确定了沟槽显影后通孔中DUV光刻胶残留导致互连失效的原因。通过适当的表面处理可以消除光刻胶残留，并证明了严密的Rc-via分布。此外，还研究了SOP与化学机械抛光(CMP)的相容性。通过优化Cu/TaN和氧化物抛光，获得了良好的Rs和泄漏分布。通过压煮试验、温度循环和热退火测试了uv处理SOP/Cu damascene的可靠性，没有发现Cu电阻、线对线电容(C，，)和泄漏降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Integration of low-k spin-on polymer and Cu for Damascene

Integration of low-k spin-on polymer (SOP, k 2.7) and Cu for damascene by patterning via first and trench secondly has been investigated. Interconnect failure caused by DUV photoresist residues in via hole after trench photo development has been identified. The photoresist residue can be eliminated by proper surface treatment after via etching and a tight Rc-via distribution is demonstrated. In addition, the compatibility of SOP and chemical mechanical polish (CMP) was also studied. Good Rs and leakage distributions are obtained by optimizing Cu/TaN and oxide polish. Pressure cook test, temperature cycling and thermal anneal has been performed to test the reliability of UV-treated SOP/Cu damascene and no degradation in Cu resistance, line-to-line capacitance (C,,), and leakage has been found.

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来源期刊

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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