纳米电子器件的原子尺度应变测量

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2007-07-11 DOI:10.1109/IPFA.2007.4378052

C. Tung, K. Pey, Fu Qinrong, B. Fox

{"title":"纳米电子器件的原子尺度应变测量","authors":"C. Tung, K. Pey, Fu Qinrong, B. Fox","doi":"10.1109/IPFA.2007.4378052","DOIUrl":null,"url":null,"abstract":"Atomic scale lattice strain measurement using high resolution transmission electron microscopic (HR- TEM) is an important application for semiconductor device characterization. Recent advancement and issues in these areas are discussed. Their potential applications in contemporary sub-45 nm metal-oxide- semiconductor field effect transistor (MOSFET) technology nodes are crucial. Major technical limitation in using these characterization techniques in wafer production environment is discussed and solution proposed.","PeriodicalId":334987,"journal":{"name":"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Atomic Scale Strain Measurement for Nanoelectronic Devices\",\"authors\":\"C. Tung, K. Pey, Fu Qinrong, B. Fox\",\"doi\":\"10.1109/IPFA.2007.4378052\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Atomic scale lattice strain measurement using high resolution transmission electron microscopic (HR- TEM) is an important application for semiconductor device characterization. Recent advancement and issues in these areas are discussed. Their potential applications in contemporary sub-45 nm metal-oxide- semiconductor field effect transistor (MOSFET) technology nodes are crucial. Major technical limitation in using these characterization techniques in wafer production environment is discussed and solution proposed.\",\"PeriodicalId\":334987,\"journal\":{\"name\":\"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2007.4378052\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2007.4378052","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

利用高分辨率透射电子显微镜(HR- TEM)进行原子尺度晶格应变测量是半导体器件表征的重要应用。讨论了这些领域的最新进展和存在的问题。它们在当代亚45纳米金属氧化物半导体场效应晶体管(MOSFET)技术节点中的潜在应用是至关重要的。讨论了在晶圆生产环境中使用这些表征技术的主要技术限制，并提出了解决方案。

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Atomic Scale Strain Measurement for Nanoelectronic Devices

Atomic scale lattice strain measurement using high resolution transmission electron microscopic (HR- TEM) is an important application for semiconductor device characterization. Recent advancement and issues in these areas are discussed. Their potential applications in contemporary sub-45 nm metal-oxide- semiconductor field effect transistor (MOSFET) technology nodes are crucial. Major technical limitation in using these characterization techniques in wafer production environment is discussed and solution proposed.

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2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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