高密度扇出封装设计诱发可靠性风险的求解

Yu-Ting Lin, Yi-Sheng Lin, Yu-Hsiang Hsiao
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引用次数: 0

摘要

扇出(FO)技术由于其体积小且非常薄的特点,通常用于消费类电子产品。当设计从2.5D集成电路(2.5D IC)或系统内封装(sip)转移到FO封装时,会发现一些风险。本文将分享一个高密度扇出(HDFO)与热循环测试(TCT)的案例研究,测试车辆是开/短故障。采用曲线示踪仪(I-V)、三维x射线、聚焦离子束(FIB)和扫描电镜(SEM)对试验车进行了检测,确定了试验车的失效模式。失效模式为u-pad层与RDL (Redistribution layer)接口之间的分层。氧化铜层位于RDL侧壁。化学残留导致Cu在RDL表面氧化,不良界面在TCT过程中逐渐分层。研究了化学残留产生的根本原因。分层问题通过添加等离子体清洁解决。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Solution of Design Induced Reliability Risk for High Density Fan-Out packages
Fan-Out (FO) technologies are used for consumer electronic products generally due to the small and very thin features. Some risks would be found when the design transfer from of 2.5D Integrated Circuit (2.5D IC) or system in packages (SiPs) to the FO packages. This paper will share a case study of High Density Fan-Out (HDFO) with thermal cycle test (TCT) and the test vehicle is open/short fail. The test vehicle is examined by curve tracer (I-V), 3D X-ray, Focus Ion Beam (FIB) and Scanning Electron Microscope (SEM) to find out the failure mode. The failure mode is delamination between the u-pad layer and the Redistribution Layer (RDL) interface. The Cu oxide layer is found on the RDL sidewall. The chemical residue leads to the oxidation of Cu on the RDL surface and the poor interface would be delamination gradually during TCT. Root cause of the chemical residue was investigated in this study. The delamination issue was resolved by adding plasma clean.
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