考虑温度效应的hfox基忆阻器的突触特性-热突触行为的演示

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2018-04-01 DOI:10.1109/VLSI-TSA.2018.8403853

Jia－CHEN, Sungjun Kim, Ying‐Chen Chen, Min-Hwi Kim, Yi Li, X. Miao, Yao‐Feng Chang, Byung-Gook Park, Jack C. Lee

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引用次数: 0

摘要

在这项工作中，我们制作了基于hfox的cmos兼容的ram型记忆电阻器，并分析了其突触特性。Ni/HfOx/p++Si灯丝型器件在与直流扫描相同的脉冲响应中，在SET和RESET操作中均表现出突变的电阻变化，而Ni/HfOx/n++Si接口型器件表现出渐变的变化。随着温度的升高，接口型器件表现出更多的动态状态，而在温度< 145℃时，使用记忆突触的神经网络识别率没有下降。我们的研究结果表明，使用ram型记忆电阻器制造的神经形态芯片可以在很宽的温度范围内工作。

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Synaptic properties considering temperature effect in HfOx-based memristor - Demonstration of homo-thermal synaptic behaviors

In this work, we fabricated HfOx-based RRAM-type memristors that are CMOS-compatible and analyzed its synapse characteristics. Ni/HfOx/p++Si filament-type device exhibits abrupt resistive changes in both SET and RESET operations in the same pulse response as the DC sweep, while interface-type Ni/HfOx/n++Si devices show gradual changes. Interface-type devices exhibit more dynamic states as the temperature rises, while the recognition rate of neural network using memristive synapses did not degrade for T < 145 °C. Our results suggest that neuromorphic chips fabricated using RRAM-type memristors can operate under wide temperature range.

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2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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