垂直沟道场效应晶体管自热效应分析

2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2019-03-24 DOI:10.1109/EUROSIME.2019.8724510

Ilho Myeong, J. Jeon, Myounggon Kang, Hyungcheol Shin

{"title":"垂直沟道场效应晶体管自热效应分析","authors":"Ilho Myeong, J. Jeon, Myounggon Kang, Hyungcheol Shin","doi":"10.1109/EUROSIME.2019.8724510","DOIUrl":null,"url":null,"abstract":"In this paper, self-heating effect in newly introduced Vertical FET is investigated and discussed, and several architecture parameters such as channel width, number of channels affecting thermal reliability of VFET are studied through simulations. It is illustrated that VFET shows high lattice temperature and thermal resistance increase from changes in such architecture parameters. And lattice temperature imbalance between channels which causes performance and lifetime differences can be mitigated by adjusting the spacing between channels of multi-channel VFETs.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Analysis of Self Heating Effect in Vertical-channel Field Effect Transistor\",\"authors\":\"Ilho Myeong, J. Jeon, Myounggon Kang, Hyungcheol Shin\",\"doi\":\"10.1109/EUROSIME.2019.8724510\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, self-heating effect in newly introduced Vertical FET is investigated and discussed, and several architecture parameters such as channel width, number of channels affecting thermal reliability of VFET are studied through simulations. It is illustrated that VFET shows high lattice temperature and thermal resistance increase from changes in such architecture parameters. And lattice temperature imbalance between channels which causes performance and lifetime differences can be mitigated by adjusting the spacing between channels of multi-channel VFETs.\",\"PeriodicalId\":357224,\"journal\":{\"name\":\"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-03-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUROSIME.2019.8724510\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUROSIME.2019.8724510","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文研究和讨论了新引入的垂直场效应管的自热效应，并通过仿真研究了影响垂直场效应管热可靠性的几个结构参数，如通道宽度、通道数等。结果表明，随着结构参数的变化，VFET晶格温度升高，热阻增大。而通道间晶格温度不平衡导致的性能和寿命差异可以通过调节多通道vfet的通道间距来缓解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Analysis of Self Heating Effect in Vertical-channel Field Effect Transistor

In this paper, self-heating effect in newly introduced Vertical FET is investigated and discussed, and several architecture parameters such as channel width, number of channels affecting thermal reliability of VFET are studied through simulations. It is illustrated that VFET shows high lattice temperature and thermal resistance increase from changes in such architecture parameters. And lattice temperature imbalance between channels which causes performance and lifetime differences can be mitigated by adjusting the spacing between channels of multi-channel VFETs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

自引率

0.00%

发文量