1.5 nm栅极氧化mosfet中的射频噪声及片上集成NMOS LNA电路的评价

1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216) Pub Date : 1998-06-09 DOI:10.1109/VLSIT.1998.689214

H. Momose, R. Fujimoto, S. Otaka, E. Morifuji, T. Ohguro, T. Yoshitomi, H. Kimijima, S. Nakamura, T. Morimoto, Y. Katsumata, H. Tanimoto, H. Iwai

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引用次数: 18

摘要

最近，直接隧道栅氧化mosfet已经显示出在模拟应用中实现极高射频性能的潜力。在栅极长度小于0.1 /spl mu/m的情况下，获得了超过150 GHz的优良截止频率。本文详细介绍了mosfet的射频噪声特性。研究了栅极氧化层厚度与电源电压的关系。此外，还首次对用1.5 nm栅氧化mosfet制作的NMOS LNA(低噪声放大器)电路进行了评价。实验结果表明，模拟电路运行良好，噪声低，增益高。

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RF noise in 1.5 nm gate oxide MOSFETs and the evaluation of the NMOS LNA circuit integrated on a chip

Recently, direct tunneling gate oxide MOSFETs have shown the potential of enabling extremely high RF performance in analog applications. An excellent cutoff frequency of more than 150 GHz was reported at a gate length of less than 0.1 /spl mu/m. In this paper, RF noise characteristics of the MOSFETs are reported in detail. The gate oxide thickness and supply voltage dependencies were investigated. In addition, NMOS LNA (low noise amplifier) circuits made with 1.5 nm gate oxide MOSFETs were evaluated for the first time. Good RF analog circuit operation with very low noise and high gain was confirmed.

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来源期刊

1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216)

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