{"title":"Ga-a掩蔽污染源，防止FIB在Al膜上横截面","authors":"L. Tang, J. Woo, L. Wong","doi":"10.1109/EPTC.2016.7861434","DOIUrl":null,"url":null,"abstract":"Pure Gallium metal is a good adhesive agent which can be used to paste small coupons on full wafer for metal growth in high temperature PVD chamber as Ga has low vapor pressure in high temperature. However, when the process chamber exceeds a certain critical temperature, Gallium at the back of the coupon can contaminate front metal surface in process chamber to form a Ga rich metal surface layer. With such Ga contamination, Ga+ based FIB (Focus Ion Beam) cannot be used to perform cross-section on the metal film has never been reported. We have observed this phenomenon on thick Al film growth on SiO2/Si substrate. In this paper, we described the details of such phenomenon and listed out a possible explanation.","PeriodicalId":136525,"journal":{"name":"2016 IEEE 18th Electronics Packaging Technology Conference (EPTC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Ga-a masking contamination source to prevent FIB cross-section on Al film\",\"authors\":\"L. Tang, J. Woo, L. Wong\",\"doi\":\"10.1109/EPTC.2016.7861434\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Pure Gallium metal is a good adhesive agent which can be used to paste small coupons on full wafer for metal growth in high temperature PVD chamber as Ga has low vapor pressure in high temperature. However, when the process chamber exceeds a certain critical temperature, Gallium at the back of the coupon can contaminate front metal surface in process chamber to form a Ga rich metal surface layer. With such Ga contamination, Ga+ based FIB (Focus Ion Beam) cannot be used to perform cross-section on the metal film has never been reported. We have observed this phenomenon on thick Al film growth on SiO2/Si substrate. In this paper, we described the details of such phenomenon and listed out a possible explanation.\",\"PeriodicalId\":136525,\"journal\":{\"name\":\"2016 IEEE 18th Electronics Packaging Technology Conference (EPTC)\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 18th Electronics Packaging Technology Conference (EPTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPTC.2016.7861434\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 18th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2016.7861434","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ga-a masking contamination source to prevent FIB cross-section on Al film
Pure Gallium metal is a good adhesive agent which can be used to paste small coupons on full wafer for metal growth in high temperature PVD chamber as Ga has low vapor pressure in high temperature. However, when the process chamber exceeds a certain critical temperature, Gallium at the back of the coupon can contaminate front metal surface in process chamber to form a Ga rich metal surface layer. With such Ga contamination, Ga+ based FIB (Focus Ion Beam) cannot be used to perform cross-section on the metal film has never been reported. We have observed this phenomenon on thick Al film growth on SiO2/Si substrate. In this paper, we described the details of such phenomenon and listed out a possible explanation.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
