含不同A元素的反应溅射ti族MAX合金用于线材的评价

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI:10.1109/IITC/MAM57687.2023.10154627

Takeyasu Saito, Kazunobu Wakamatsu, Kazuki Ueda, N. Okamoto

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引用次数: 0

摘要

用Ar或N2反应溅射法制备TiSiCN薄膜作为ti基MAX化合物，评价其作为替代Cu的布线材料。我们通过改变TiC盘上的Si面积作为溅射靶来控制Si/TiC比，详细研究了靶成分的影响，并研究了薄膜形成条件对薄膜取向、表面形貌和薄片电阻的影响。

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Evaluation of Reactive Sputtered Ti-group MAX Alloy with Different A Elements for Wiring Material

TiSiCN thin film, as a Ti-based MAX compounds, was prepared through reactive sputtering with Ar or N2 to evaluate as a wiring material instead of Cu. We investigated in detail the effects of target composition by changing Si area on TiC disk as a sputtering target to control Si/TiC ratio and also investigated the effects of film formation conditions on film orientation, surface morphology, and sheet resistance.

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2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)

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