应变工程超薄SOI (ETSOI)用于高性能CMOS

2012 Symposium on VLSI Technology (VLSIT) Pub Date : 2012-06-12 DOI:10.1109/VLSIT.2012.6242489

A. Khakifirooz, K. Cheng, T. Nagumo, N. Loubet, T. Adam, A. Reznicek, J. Kuss, D. Shahrjerdi, R. Sreenivasan, S. Ponoth, H. He, P. Kulkarni, Q. Liu, P. Hashemi, P. Khare, S. Luning, S. Mehta, J. Gimbert, Y. Zhu, Z. Zhu, J. Li, A. Madan, T. Levin, F. Monsieur, T. Yamamoto, S. Naczas, S. Schmitz, S. Holmes, C. Aulnette, N. Daval, W. Schwarzenbach, B. Nguyen, V. Paruchuri, M. Khare, G. Shahidi, B. Doris

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引用次数: 33

摘要

报道了高性能应变工程ETSOI器件。研究了三种提高性能的方法，即接触应变、应变SOI (SSDOI)和绝缘子上sige (SGOI)。当竞争驱动电流分别为1.65mA/μm和1.25mA/μm时，fet和fet的iff分别为0.95mA/μm和0.70mA/μm, Ioff =100nA/μm, VDD为1V。

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Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS

High-performance strain-engineered ETSOI devices are reported. Three methods to boost the performance, namely contact strain, strained SOI (SSDOI) for NFET, and SiGe-on-insulator (SGOI) for PFET are examined. Significant performance boost is demonstrated with competitive drive currents of 1.65mA/μm and 1.25mA/μm, and I_eff of 0.95mA/μm and 0.70mA/μm at I_off =100nA/μm and V_DD of 1V, for NFET and PFET, respectively.

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2012 Symposium on VLSI Technology (VLSIT)

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