体FinFET技术中ESD p方向二极管的设计与优化

2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI:10.23919/EOS/ESD.2018.8509757

You Li, M. Miao, R. Gauthier

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引用次数: 3

摘要

我们提出了一种采用先进的体FinFET技术制造的ESD p方向STI二极管。详细评价了对工艺和设计参数的影响。通过优化设计，相对于C方向设计，p方向ESD STI二极管的It2/C和It2/Area的性能分别提高了46%和16%。

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Design and Optimization of ESD P-Direction Diode in Bulk FinFET Technology

We present an ESD P-direction STI diode fabricated in an advanced bulk FinFET technology. The impact on process and design parameters are evaluated in detail. With design optimization, the ESD P-direction STI diode achieves 46% and 16% performance improvement for It2/C and It2/Area relative to the C-direction design.

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来源期刊

2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

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