闪存器件诱导CDM-ESD测试方法综述

18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2011-07-04 DOI:10.1109/IPFA.2011.5992714

Law Che Seong, Y. Seng, Kaneasan Edumban, Lee Meng Chuan, S.F.C. Kean

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引用次数: 0

摘要

在CDM-ESD测试过程中，放电引脚与被测端子之间可能出现不对准，特别是当封装尺寸缩小时。我们研究了上触球(未对准)和侧触球(未对准)对存储器件电特性的影响。实验数据采用统计假设检验进行分析，并得到高斯定律物理理论的支持。我们还研究了Mylar介电膜对器件性能的影响。

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Review on induced CDM-ESD test methodologies for flash memory device

During CDM-ESD test, misalignment may occur between the discharge pin and the DUT terminal, especially when the package size shrinks down. We investigated the effect of top ball touch (non-misaligned) and side ball touch (misaligned) on the electrical characteristics of memory devices. The experimental data were analyzed using statistical hypothesis tests and supported by the physics theory of Gauss' Law. We also studied the impact of Mylar dielectric film on the device performance.

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18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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