基于rtn的缺陷跟踪技术:实验探测临界灯丝区域的空间和能量分布及其与HfO2RRAM开关操作和失效机制的相关性

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI:10.1109/VLSIT.2016.7573402

Chai Zheng, Jigang Ma, W. Zhang, B. Govoreanu, Eddy Simoen, J. Zhang, Z. Ji, Rui Gao, Guido Groeseneken, Malgorzata Jurczak

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引用次数: 24

摘要

本文首次提出了一种基于RTN的缺陷跟踪技术，可以监测RRAM器件中缺陷的运动和灯丝的变化。确定了开关在不同工况下的临界灯丝区，揭示了新的耐久失效机理。该技术为RRAM技术的发展提供了一个有用的工具。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2RRAM switching operation and failure mechanism

For the first time, an RTN based defect tracking technique has been developed that can monitor the defect movement and filament alteration in RRAM devices. Critical filament region has been identified during switching operation at various conditions and new endurance failure mechanism is revealed. This technique provides a useful tool for RRAM technology development.

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2016 IEEE Symposium on VLSI Technology

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