{"title":"10gb /s光纤链路低噪声、高增益硅双极透阻前置放大器的设计与实现","authors":"M. Neuhauser, H. Rein, H. Wernz","doi":"10.1109/BIPOL.1994.587885","DOIUrl":null,"url":null,"abstract":"Design principles and circuit configurations of Si-bipolar preamplifiers for 10 Gb/s optical-fiber links are discussed. The ICs were fabricated in an advanced production technology. High transimpedance (710 /spl Omega/) and low equivalent input noise current density (averaged: 9 pA//spl radic/(Hz)) were achieved.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"157 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Design and realization of low-noise, high-gain Si-bipolar transimpedance preamplifiers for 10 Gb/s optical-fiber links\",\"authors\":\"M. Neuhauser, H. Rein, H. Wernz\",\"doi\":\"10.1109/BIPOL.1994.587885\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Design principles and circuit configurations of Si-bipolar preamplifiers for 10 Gb/s optical-fiber links are discussed. The ICs were fabricated in an advanced production technology. High transimpedance (710 /spl Omega/) and low equivalent input noise current density (averaged: 9 pA//spl radic/(Hz)) were achieved.\",\"PeriodicalId\":373721,\"journal\":{\"name\":\"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"volume\":\"157 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1994.587885\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1994.587885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and realization of low-noise, high-gain Si-bipolar transimpedance preamplifiers for 10 Gb/s optical-fiber links
Design principles and circuit configurations of Si-bipolar preamplifiers for 10 Gb/s optical-fiber links are discussed. The ICs were fabricated in an advanced production technology. High transimpedance (710 /spl Omega/) and low equivalent input noise current density (averaged: 9 pA//spl radic/(Hz)) were achieved.