超级结器件的结端技术

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856820

Y. Bai, A.Q. Huang, X. Li

{"title":"超级结器件的结端技术","authors":"Y. Bai, A.Q. Huang, X. Li","doi":"10.1109/ISPSD.2000.856820","DOIUrl":null,"url":null,"abstract":"The theory of junction termination for super junction devices is proposed in this paper. Using this theory, junction termination techniques for super junction structures are developed that achieve over 95% of the ideal breakdown voltage.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"164 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Junction termination technique for super junction devices\",\"authors\":\"Y. Bai, A.Q. Huang, X. Li\",\"doi\":\"10.1109/ISPSD.2000.856820\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The theory of junction termination for super junction devices is proposed in this paper. Using this theory, junction termination techniques for super junction structures are developed that achieve over 95% of the ideal breakdown voltage.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"164 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856820\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856820","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

本文提出了超结器件的结端理论。利用这一理论，开发了超结结构的结端技术，实现了95%以上的理想击穿电压。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Junction termination technique for super junction devices

The theory of junction termination for super junction devices is proposed in this paper. Using this theory, junction termination techniques for super junction structures are developed that achieve over 95% of the ideal breakdown voltage.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

自引率

0.00%

发文量