利用PCB和微处理器对近电磁场地图进行一米辐射场的预测

F. de Daran, J. Chollet-Ricard, F. Lafon, O. Maurice
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引用次数: 32

摘要

本文提出了一种芯片的近场扫描表征方法,该方法可以预测电子板上的耦合现象,并可以评估一米处的辐射发射。首先给出了简单电路的理论模型。用电磁扫描找到了标量电位和矢量电位的估计。利用这些结果,我们计算了近距离和远距离的辐射。并与实验结果进行了比较。作为结论,我们提出了一个简单的模型来描述芯片的辐射发射,并给出了一个实际的应用案例
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Prediction of the field radiated at one meter from PCB's and microprocessors from near EM field cartography
The paper shows a near field scanning method to characterize chips that leads to the prediction of the coupling phenomena on the electronic board and to the evaluation of the radiated emission at one meter. A theoretical model is first given for simple circuits. An estimation of the scalar and vector potentials is found with the EM scan. Using these results, we calculate the near and far emissions. Comparisons with experimental results are given. As a conclusion, we propose a simple model describing chip radiated emission and we show a real case use
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