分栅MOS量子点结构中的输运

Proceedings Ninth Great Lakes Symposium on VLSI Pub Date : 1999-03-04 DOI:10.1109/GLSV.1999.757466

S. Goodnick, J. Bird, D. Ferry, A. Gunther, M. Khoury, M. Kozicki, M. J. Rack, T. Thornton, D. Vasileska-Kafedezka

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引用次数: 1

摘要

提出了一种通过顶门和侧门制备电子数可控硅量子点结构的新方法。我们测试的器件尺寸从40纳米到200纳米不等。通过改变密度与顶栅极，并控制输入和输出障碍的点与侧栅极，电导峰被观察到映射的细节，在点内的能级以及电子相互作用。

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Transport in split gate MOS quantum dot structures

A novel technique has been developed for the fabrication of Si quantum dot structures with controllable electron number through both top and side gates. We have tested devices ranging in size from 40 to 200 nm. By varying the density with the top gate, and controlling the input and output barriers of the dot with the side gates, conductance peaks are observed which map details of the energy level within the dot as well as the interaction of the electrons with one another.

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Proceedings Ninth Great Lakes Symposium on VLSI

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