纳米CMOS技术中的高效模拟信号处理

W. Sansen
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引用次数: 0

摘要

只提供摘要形式。在纳米CMOS技术中,由于通道长度的缩短,出现了一些新的现象。其中最重要的是速度饱和和栅漏电流。因此,模拟信号处理受到精度降低和噪声增加的影响。此外,跨导和速度都受到速度饱和的限制。此外,电源电压已降低到1伏特左右的值,为模拟信号处理带来了新的挑战。本报告概述了这些现象。通过回顾纳米CMOS技术中模拟信号处理的最重要的构建模块来说明它们。放大器和滤波器的讨论和比较基于普遍接受的FOM(品质图)。其次是各种应用的1伏以下电路的概述。轨对轨放大器和放大器/滤波器配置给出了门和批量驱动器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Efficient analog signal processing in nm CMOS technologies
Summary form only given. In nanometer CMOS technologies, several new phenomena occur as a result of the shorter channel-lengths. The most important ones are velocity saturation and gate leakage currents. As a result analog signal processing suffers from reduced accuracy and more noise. Also the transconductance and speed are both limited by velocity saturation. Moreover the supply voltage has been reduced to values around 1 Volt, creating new challenges for analog signal processing. This presentation provides an overview of these phenomena. They are illustrated by a review of the most important building blocks for analog signal processing in nm CMOS technologies. Amplifiers and filters are discussed and compared based on generally accepted FOM (Figures of Merit). It is followed by an overview of sub-1 Volt circuits for various applications. Rail-to-rail amplifiers and amplifiers/filters configurations are given with both Gate and Bulk drives.
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