InGaAs光子发射显微镜系统的探测性优化

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI:10.1109/IPFA.2006.251053

S.L. Tan, K. Yim, D.S.H. Chan, J. Phang, Y. Zhou, L. Balk, C. Chua, L. S. Koh

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引用次数: 6

摘要

虽然光子发射显微镜(PEM)系统广泛应用于集成电路故障分析，但目前还没有定量的基准来评估和比较PEM系统的整体灵敏度性能。本文描述了一种基于光谱探测率测量来量化PEM系统整体灵敏度的方法。它已应用于HgCdTe (MCT)和InGaAs PEM系统。该方法还应用于InGaAs PEM系统，量化了InGaAs PEM系统随探测器温度变化的检出率变化。该方法还用于比较发射图像的信噪比通过正常时间积分与数字积分，其中发射图像的许多帧被加起来产生一个单一的发射图像

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Detectivity Optimization of InGaAs Photon Emission Microscope Systems

Although photon emission microscope (PEM) systems are widely used in integrated circuit failure analysis, there is no known quantitative baseline to assess and compare the overall sensitivity performance of PEM systems. This paper describes a method to quantify the overall sensitivity of PEM systems based on spectral detectivity measurements. It has been applied to HgCdTe (MCT) and InGaAs PEM systems. It is also applied to an InGaAs PEM system to quantify the change in the detectivity of the InGaAs PEM system as the temperature of the detector changes. The method is also used to compare the signal to noise ratio of an emission image by normal time integration with digital integration where many frames of an emission image is added up to produce a single emission image

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2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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