A. Laurent, X. Garros, S. Barraud, G. Mariniello, G. Reimbold, D. Roy, E. Vincent, G. Ghibaudo
{"title":"纳米线晶体管的热载流子降解:物理机制、宽度依赖和自热影响","authors":"A. Laurent, X. Garros, S. Barraud, G. Mariniello, G. Reimbold, D. Roy, E. Vincent, G. Ghibaudo","doi":"10.1109/VLSIT.2016.7573374","DOIUrl":null,"url":null,"abstract":"We present an extensive study of Hot Carrier reliability in N-Ωfet nanowires. For the first time 3 HC degradation modes were clearly evidenced as in planar technology and accurately modeled. Moreover HC reliability was proved to be width-independent. Finally it is shown that, although SH is important in nanowires, it has almost no implication on its HC reliability because of the weak temperature dependence of the HC mechanisms.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"2013 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Hot carrier degradation in nanowire transistors: Physical mechanisms, width dependence and impact of Self-Heating\",\"authors\":\"A. Laurent, X. Garros, S. Barraud, G. Mariniello, G. Reimbold, D. Roy, E. Vincent, G. Ghibaudo\",\"doi\":\"10.1109/VLSIT.2016.7573374\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present an extensive study of Hot Carrier reliability in N-Ωfet nanowires. For the first time 3 HC degradation modes were clearly evidenced as in planar technology and accurately modeled. Moreover HC reliability was proved to be width-independent. Finally it is shown that, although SH is important in nanowires, it has almost no implication on its HC reliability because of the weak temperature dependence of the HC mechanisms.\",\"PeriodicalId\":129300,\"journal\":{\"name\":\"2016 IEEE Symposium on VLSI Technology\",\"volume\":\"2013 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2016.7573374\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573374","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hot carrier degradation in nanowire transistors: Physical mechanisms, width dependence and impact of Self-Heating
We present an extensive study of Hot Carrier reliability in N-Ωfet nanowires. For the first time 3 HC degradation modes were clearly evidenced as in planar technology and accurately modeled. Moreover HC reliability was proved to be width-independent. Finally it is shown that, although SH is important in nanowires, it has almost no implication on its HC reliability because of the weak temperature dependence of the HC mechanisms.
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