新型3.3 kv先进沟槽HiGT，低损耗，低dv/dt噪声

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694391

Y. Toyota, So Watanabe, Taiga Arai, M. Wakagi, M. Mori, Masashi Shinagawa, K. Azuma, Yuji Shima, T. Oda, Y. Toyoda, K. Saito

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引用次数: 28

摘要

研制了新型低损耗、低dvAK/dt噪声的3.3 kv沟槽IGBT。igbt的结构特征是与沟槽门分离的深p-WELL层。这种结构抑制了过量的VGE超调，然后降低了恢复dvAK/dt。此外，通过降低深层p-WELL层(RFP)的阻力，这种效果得到增强。研究首次发现，通过将p-WELL层与海沟栅极分离并降低RFP, VCEsat和恢复dvAK/dt之间的权衡特性得到了显著改善。回收dvAK/dt比传统的战壕IGBT减少了79%以上，保持了一个小的VCEsat和Eon等于传统的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Novel 3.3-kV advanced trench HiGT with low loss and low dv/dt noise

Novel 3.3-kV trench IGBT with low loss and low dv_AK/dt noise was developed. The structural feature of the IGBTs is deep p-WELL layers separated from trench gates. This structure suppresses excess V_GE overshoot and then reduces recovery dv_AK/dt. Moreover, this effect is enhanced by reducing the resistance of the deep p-WELL layers (R_FP). It was found that, for the first time, the trade-off characteristics between V_CEsat and recovery dv_AK/dt were drastically improved by separating p-WELL layers from trench gates and decreasing R_FP. The recovery dv_AK/dt could be reduced by 79% more than that for the conventional trench IGBT, maintaining a small V_CEsat and E_on equal to the conventional one.

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来源期刊

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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