侧壁反射增强氮化镓基深紫外发光二极管的光提取

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2016-11-01 DOI:10.1109/IFWS.2016.7803775

Yanan Guo, Yun Zhang, Jianchang Yan, Xiang Chen, Shuo Zhang, Junxi Wang, Jinmin Li

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引用次数: 5

摘要

海藻基深紫外发光二极管(led)存在严重的光提取问题。本文报道了一种侧壁反射的方法来提高氮化镓基DUV led的光提取。该方法包括台面微阵列设计和片上用于DUV光的高反射金属衬垫。使用这种方法的278纳米led显示出30。与没有高反射金属衬垫的led相比，光输出功率(LOP)提高了%。研究了微阵列台面尺寸对LOP和电压的影响。algan基DUV LED的LOP在100 mA时可达6.8 mW，在500 mA时可达近25 mW。L80寿命超过4000小时。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Enhancement of light extraction on AlGaN-based deep-ultraviolet light-emitting diodes using a sidewall reflection method

AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) suffer serious light extraction problems. In this work we report a sidewall reflection method to enhance the light extraction of AlGaN-based DUV LEDs. The method includes mesa micro array designs and on-chip high reflective metal pads for DUV light. The 278-nm LEDs using this method show a 30.% improvement in light output power (LOP) compared to LEDs without high reflective metal pads. The dependence of LOP and voltage on micro array mesa size is also investigated. The LOP of the AlGaN-based DUV LED can reach 6.8 mW at 100 mA and nearly 25 mW at 500 mA. The L80 lifetime exceeds 4000 hours.

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2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

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