在厚膜SOI衬底上生长可靠的栅极氧化物

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344583

K. Yallup, O. Creighton

{"title":"在厚膜SOI衬底上生长可靠的栅极氧化物","authors":"K. Yallup, O. Creighton","doi":"10.1109/SOI.1993.344583","DOIUrl":null,"url":null,"abstract":"One of the key elements of a reliable CMOS process is a robust, defect free gate oxide. The formation of such layers on bulk substrates is a topic that has been studied for many years and has reached an advanced state of understanding. In contrast the growth of reliable gate oxides on either thick or thin film SOI substrates is considerably less well understood.This paper discusses the formation of gate oxides on thick film SOI substrates. Two topics have been covered in this study, long term reliability of the oxide and early life failure rate of the oxide.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growing reliable gate oxides on thick film SOI substrates\",\"authors\":\"K. Yallup, O. Creighton\",\"doi\":\"10.1109/SOI.1993.344583\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"One of the key elements of a reliable CMOS process is a robust, defect free gate oxide. The formation of such layers on bulk substrates is a topic that has been studied for many years and has reached an advanced state of understanding. In contrast the growth of reliable gate oxides on either thick or thin film SOI substrates is considerably less well understood.This paper discusses the formation of gate oxides on thick film SOI substrates. Two topics have been covered in this study, long term reliability of the oxide and early life failure rate of the oxide.<<ETX>>\",\"PeriodicalId\":308249,\"journal\":{\"name\":\"Proceedings of 1993 IEEE International SOI Conference\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1993 IEEE International SOI Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1993.344583\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1993 IEEE International SOI Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1993.344583","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

可靠的CMOS工艺的关键要素之一是坚固，无缺陷的栅极氧化物。在大块基板上形成这样的层是一个已经研究了多年的话题，并且已经达到了一个先进的理解状态。相比之下，在厚膜或薄膜SOI衬底上可靠栅极氧化物的生长相当不容易理解。本文讨论了在厚膜SOI衬底上栅极氧化物的形成。本研究涵盖了两个主题:氧化物的长期可靠性和氧化物的早期寿命故障率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Growing reliable gate oxides on thick film SOI substrates

One of the key elements of a reliable CMOS process is a robust, defect free gate oxide. The formation of such layers on bulk substrates is a topic that has been studied for many years and has reached an advanced state of understanding. In contrast the growth of reliable gate oxides on either thick or thin film SOI substrates is considerably less well understood.This paper discusses the formation of gate oxides on thick film SOI substrates. Two topics have been covered in this study, long term reliability of the oxide and early life failure rate of the oxide.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of 1993 IEEE International SOI Conference

自引率

0.00%

发文量