TiW对超薄相变材料层的接触电阻

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-09-11 DOI:10.1109/ESSDERC.2011.6044228

D. Roy, J. Klootwijk, D. Gravesteijn, R. Wolters

{"title":"TiW对超薄相变材料层的接触电阻","authors":"D. Roy, J. Klootwijk, D. Gravesteijn, R. Wolters","doi":"10.1109/ESSDERC.2011.6044228","DOIUrl":null,"url":null,"abstract":"In this article we report on the change in contact resistance of TiW to doped-Sb2Te in the 5nm–50nm thickness range of the PCM layer. This interface is characterized both in the amorphous and in crystalline state of doped-Sb2Te. The nature of the interface is characterized by electrical contact resistance measurements and is expressed in terms of specific contact resistance, ρC. Results from the measurements on these structures with illumination indicated the existence of a space-charge region at the metal amorphous doped-Sb2Te interface.","PeriodicalId":161896,"journal":{"name":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Contact resistance of TiW to ultra-thin phase change material layers\",\"authors\":\"D. Roy, J. Klootwijk, D. Gravesteijn, R. Wolters\",\"doi\":\"10.1109/ESSDERC.2011.6044228\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article we report on the change in contact resistance of TiW to doped-Sb2Te in the 5nm–50nm thickness range of the PCM layer. This interface is characterized both in the amorphous and in crystalline state of doped-Sb2Te. The nature of the interface is characterized by electrical contact resistance measurements and is expressed in terms of specific contact resistance, ρC. Results from the measurements on these structures with illumination indicated the existence of a space-charge region at the metal amorphous doped-Sb2Te interface.\",\"PeriodicalId\":161896,\"journal\":{\"name\":\"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2011.6044228\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2011.6044228","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文报道了在PCM层5nm-50nm厚度范围内TiW与掺杂sb2te的接触电阻变化。该界面具有掺杂sb2te的非晶态和晶态两种形态。界面的性质由电接触电阻测量来表征，并以比接触电阻ρC表示。在光照下对这些结构的测量结果表明，在金属非晶掺杂- sb2te界面处存在空间电荷区。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Contact resistance of TiW to ultra-thin phase change material layers

In this article we report on the change in contact resistance of TiW to doped-Sb2Te in the 5nm–50nm thickness range of the PCM layer. This interface is characterized both in the amorphous and in crystalline state of doped-Sb2Te. The nature of the interface is characterized by electrical contact resistance measurements and is expressed in terms of specific contact resistance, ρC. Results from the measurements on these structures with illumination indicated the existence of a space-charge region at the metal amorphous doped-Sb2Te interface.

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2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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