{"title":"在高掺杂多晶硅上制备热稳定的TiSi/ sub2 /","authors":"A. Perera, C. Lage, A. Sitaram, M. Woo, S. Tatti","doi":"10.1109/IEDM.1992.307486","DOIUrl":null,"url":null,"abstract":"Using TiSi/sub 2/ to strap polysilicon over severe topography is hampered by the non-conformality of sputter deposited titanium (Ti) films. Thinning of the Ti translates into regions with thin silicide which degrade drastically when subject to 900 degrees C anneals. Etching back a thick polysilicon film to the desired thickness planarizes the surface for Ti deposition and eliminates the influence of underlying topography. The fabrication process outlined provides a final TiSi/sub 2/ sheet resistance approximately 2 Omega / Square Operator , after a 900 degrees C anneal in O/sub 2/.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thermally robust TiSi/sub 2/ on heavily doped polycrystalline silicon over severe topography\",\"authors\":\"A. Perera, C. Lage, A. Sitaram, M. Woo, S. Tatti\",\"doi\":\"10.1109/IEDM.1992.307486\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using TiSi/sub 2/ to strap polysilicon over severe topography is hampered by the non-conformality of sputter deposited titanium (Ti) films. Thinning of the Ti translates into regions with thin silicide which degrade drastically when subject to 900 degrees C anneals. Etching back a thick polysilicon film to the desired thickness planarizes the surface for Ti deposition and eliminates the influence of underlying topography. The fabrication process outlined provides a final TiSi/sub 2/ sheet resistance approximately 2 Omega / Square Operator , after a 900 degrees C anneal in O/sub 2/.<<ETX>>\",\"PeriodicalId\":287098,\"journal\":{\"name\":\"1992 International Technical Digest on Electron Devices Meeting\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 International Technical Digest on Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1992.307486\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307486","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermally robust TiSi/sub 2/ on heavily doped polycrystalline silicon over severe topography
Using TiSi/sub 2/ to strap polysilicon over severe topography is hampered by the non-conformality of sputter deposited titanium (Ti) films. Thinning of the Ti translates into regions with thin silicide which degrade drastically when subject to 900 degrees C anneals. Etching back a thick polysilicon film to the desired thickness planarizes the surface for Ti deposition and eliminates the influence of underlying topography. The fabrication process outlined provides a final TiSi/sub 2/ sheet resistance approximately 2 Omega / Square Operator , after a 900 degrees C anneal in O/sub 2/.<>
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