平面内驱动铁磁MEMS的cmos兼容后端工艺

TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference Pub Date : 2009-06-21 DOI:10.1109/SENSOR.2009.5285516

M. Glickman, P. Tseng, J. Harrison, I. Goldberg, Peter Johnson, P. Smeys, T. Niblock, J. Judy

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引用次数: 9

摘要

我们设计，制造和测试了平面内驱动铁磁MEMS开关和螺线管电感器，它们是使用cmos兼容的后端工艺生产的。该工艺创造了紧凑的高性能器件，无需高温工艺(<;400°C)或蚀刻到晶圆片的平面。

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CMOS-compatible back-end process for in-plane actuating ferromagnetic MEMS

We have designed, fabricated, and tested in-plane actuating ferromagnetic MEMS switches and solenoidal inductors, which were produced using a CMOS-compatible back-end process. This process creates compact high-performance devices without high temperature processes (<; 400°C) or etching into the plane of the wafer.

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来源期刊

TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference

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