Enhanced performance of Ag-filament threshold switching selector by rapid thermal processing

Selector devices are typically employed to suppress sneak path currents in RRAM array. Here, we demonstrate a bidirectional Ag- filament threshold switching (TS) selector with an enhanced performance of large selectivity over 108 and high on-state current beyond 100 µA through rapid thermal processing (RTP). The TS selector has more than 100 M cycles endurance and can remain stable switching even when ambient temperature is up to 200°C. The mechanism of the TS selector is analyzed to explain the bidirectional selector characteristics. Indeed, this TS selector would be a good candidate for 1S1R configuration and future high-density 3D RRAM integration.