P. Hashemi, T. Ando, K. Balakrishnan, E. Cartier, M. Lofaro, J. Ott, J. Bruley, K. Lee, S. Koswatta, S. Dawes, J. Rozen, A. Pyzyna, K. Chan, S. Engelmann, D. Park, V. Narayanan, R. Mo, E. Leobandung
{"title":"替换高k /金属栅极高锗含量应变SiGe finfet，具有高空穴迁移率，在侵略性EOT ~ 7Å下具有出色的SS和可靠性，并将尺寸缩小到4nm以下的鳍宽","authors":"P. Hashemi, T. Ando, K. Balakrishnan, E. Cartier, M. Lofaro, J. Ott, J. Bruley, K. Lee, S. Koswatta, S. Dawes, J. Rozen, A. Pyzyna, K. Chan, S. Engelmann, D. Park, V. Narayanan, R. Mo, E. Leobandung","doi":"10.1109/VLSIT.2016.7573392","DOIUrl":null,"url":null,"abstract":"High-Ge-content (HGC) SiGe FinFETs in a “replacement High-K and metal-gate” (RMG) process flow and with aggressive EOT scaling are demonstrated, for the first time. HGC SiGe pMOS FinFETs with high-mobility, record-low RMG long-channel SS=66mV/dec and great short-channel characteristics down to L<sub>G</sub>=21nm have been demonstrated. Gate stack and transport properties down to sub-4nm fin widths (W<sub>FIN</sub>) have been also studied for the first time. We demonstrate excellent RMG mobility and reliability at aggressive EOT~7Å, and excellent μ<sub>eff</sub>=220cm<sup>2</sup>/Vs at N<sub>inv</sub>=10<sup>13</sup> for fins with W<sub>FIN</sub>~4nm, outperforming state-of-the-art devices at such dimensions and providing very promising results for FinFET scaling for future high-performance FinFET generations.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths\",\"authors\":\"P. Hashemi, T. Ando, K. Balakrishnan, E. Cartier, M. Lofaro, J. Ott, J. Bruley, K. Lee, S. Koswatta, S. Dawes, J. Rozen, A. Pyzyna, K. Chan, S. Engelmann, D. Park, V. Narayanan, R. Mo, E. Leobandung\",\"doi\":\"10.1109/VLSIT.2016.7573392\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-Ge-content (HGC) SiGe FinFETs in a “replacement High-K and metal-gate” (RMG) process flow and with aggressive EOT scaling are demonstrated, for the first time. HGC SiGe pMOS FinFETs with high-mobility, record-low RMG long-channel SS=66mV/dec and great short-channel characteristics down to L<sub>G</sub>=21nm have been demonstrated. Gate stack and transport properties down to sub-4nm fin widths (W<sub>FIN</sub>) have been also studied for the first time. We demonstrate excellent RMG mobility and reliability at aggressive EOT~7Å, and excellent μ<sub>eff</sub>=220cm<sup>2</sup>/Vs at N<sub>inv</sub>=10<sup>13</sup> for fins with W<sub>FIN</sub>~4nm, outperforming state-of-the-art devices at such dimensions and providing very promising results for FinFET scaling for future high-performance FinFET generations.\",\"PeriodicalId\":129300,\"journal\":{\"name\":\"2016 IEEE Symposium on VLSI Technology\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2016.7573392\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573392","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths
High-Ge-content (HGC) SiGe FinFETs in a “replacement High-K and metal-gate” (RMG) process flow and with aggressive EOT scaling are demonstrated, for the first time. HGC SiGe pMOS FinFETs with high-mobility, record-low RMG long-channel SS=66mV/dec and great short-channel characteristics down to LG=21nm have been demonstrated. Gate stack and transport properties down to sub-4nm fin widths (WFIN) have been also studied for the first time. We demonstrate excellent RMG mobility and reliability at aggressive EOT~7Å, and excellent μeff=220cm2/Vs at Ninv=1013 for fins with WFIN~4nm, outperforming state-of-the-art devices at such dimensions and providing very promising results for FinFET scaling for future high-performance FinFET generations.
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