采用SOI MESFET的超低差线性稳压器

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI:10.1109/SOI.2010.5641384

W. Lepkowski, S. Wilk, B. Bakkaloglu, P. Fechner, T. Thornton

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引用次数: 3

摘要

有了这些有希望的初步结果，下一阶段是在150nm SOI CMOS工艺上完成类似于[1]的完全集成设计。理想情况下，由于误差放大器可以根据MESFET LDO的需要进行优化设计，因此相对于瞬态响应和Ignd，性能将得到改善。

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Ultra-low dropout linear regulator using an SOI MESFET

With these promising preliminary results, the next phase is to complete a fully integrated design similar to that in [1] on the 150nm SOI CMOS process. Ideally the performance will improve with respect to the transient responses and Ignd since the error amplifier can be optimally designed for the needs of the MESFET LDO.

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2010 IEEE International SOI Conference (SOI)

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