Kai-Shin Li, Bo-Wei Wu, Lain‐Jong Li, Ming-Yang Li, Chia-Chin Cheng, Cho-Lun Hsu, Chang-Hsien Lin, Yi-Ju Chen, Chun-Chi Chen, C. Wu, Min-Cheng Chen, J. Shieh, W. Yeh, Y. Chueh, Fu-Liang Yang, C. Hu
{"title":"MoS2 u形MOSFET，沟道长度为10nm，多晶硅源极/漏极作为全晶圆CVD MoS2可用性的种子","authors":"Kai-Shin Li, Bo-Wei Wu, Lain‐Jong Li, Ming-Yang Li, Chia-Chin Cheng, Cho-Lun Hsu, Chang-Hsien Lin, Yi-Ju Chen, Chun-Chi Chen, C. Wu, Min-Cheng Chen, J. Shieh, W. Yeh, Y. Chueh, Fu-Liang Yang, C. Hu","doi":"10.1109/VLSIT.2016.7573375","DOIUrl":null,"url":null,"abstract":"A U-shape MoS2 pMOSFET with 10nm channel and poly-Si source/drain is demonstrated. The fabrication process is simple. Because the Si S/D serves as the nucleation seed for CVD MoS2 deposition, thin MoS2 is well deposited in the channel region any where over the fully scale oxide coated Si wafer. This is a big step forward toward a low cost multi-layer stacked TMD IC technology.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"MoS2 U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS2 availability\",\"authors\":\"Kai-Shin Li, Bo-Wei Wu, Lain‐Jong Li, Ming-Yang Li, Chia-Chin Cheng, Cho-Lun Hsu, Chang-Hsien Lin, Yi-Ju Chen, Chun-Chi Chen, C. Wu, Min-Cheng Chen, J. Shieh, W. Yeh, Y. Chueh, Fu-Liang Yang, C. Hu\",\"doi\":\"10.1109/VLSIT.2016.7573375\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A U-shape MoS2 pMOSFET with 10nm channel and poly-Si source/drain is demonstrated. The fabrication process is simple. Because the Si S/D serves as the nucleation seed for CVD MoS2 deposition, thin MoS2 is well deposited in the channel region any where over the fully scale oxide coated Si wafer. This is a big step forward toward a low cost multi-layer stacked TMD IC technology.\",\"PeriodicalId\":129300,\"journal\":{\"name\":\"2016 IEEE Symposium on VLSI Technology\",\"volume\":\"69 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2016.7573375\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573375","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MoS2 U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS2 availability
A U-shape MoS2 pMOSFET with 10nm channel and poly-Si source/drain is demonstrated. The fabrication process is simple. Because the Si S/D serves as the nucleation seed for CVD MoS2 deposition, thin MoS2 is well deposited in the channel region any where over the fully scale oxide coated Si wafer. This is a big step forward toward a low cost multi-layer stacked TMD IC technology.
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