SIMOX和结合SOI晶圆中氧化诱导应力和缺陷的比较

1997 IEEE International SOI Conference Proceedings Pub Date : 1997-10-06 DOI:10.1109/SOI.1997.634968

M. Mendicino, I. Yang, N. Cave, S. Veeraraghavan, P. Gilbert

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引用次数: 3

摘要

我们已经表明，台地或浅沟隔离的沟槽衬里氧化步骤会影响活性硅区的应力。SIMOX晶圆和键合SOI晶圆对该应力的响应有显著差异。结果表明，在沟槽隔离结构中，键合SOI晶圆的应力松弛阈值比T/sub BOX/=3700 /spl Aring/时SIMOX晶圆的应力松弛阈值大得多。

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A comparison of oxidation induced stress and defectivity in SIMOX and bonded SOI wafers

We have shown that the trench liner oxidation step in Mesa or shallow trench isolation can affect stress in active Si areas. Significant differences in the response to that stress were observed between SIMOX and Bonded SOI wafers. Our results indicate that a threshold for stress relaxation exists in trench-isolated structures which is much larger for Bonded SOI wafers than for SIMOX with T/sub BOX/=3700 /spl Aring/.

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1997 IEEE International SOI Conference Proceedings

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