全铜电化学机械平面化(Ecmp)作为45和32nm节点的技术推动者

2007 IEEE International Interconnect Technology Conferencee Pub Date : 2007-06-04 DOI:10.1109/IITC.2007.382352

M. Mellier, T. Berger, R. Duru, M. Zaleski, M. C. Luche, M. Rivoire, C. Goldberg, G. Wyborn, K.-L. Chang, Y. Wang, V. Ripoche, S. Tsai, M. Thothadri, W. Hsu, L. Chen

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引用次数: 4

摘要

在这项工作中，我们证明了Ecmp在形貌行为，相关的电扩展，光刻DOF预算和ULK兼容性方面满足45 nm和32 nm技术节点要求的能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Full Copper Electrochemical Mechanical Planarization (Ecmp) as a Technology Enabler for the 45 and 32nm Nodes

In this work, we demonstrate the capability of Ecmp to meet the 45 nm and 32 nm technology node requirements in terms of topography behavior, the related electrical spread, lithography DOF budget and ULK compatibility.

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2007 IEEE International Interconnect Technology Conferencee

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