应变si - n- mosfet热电子可靠性模拟研究

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI:10.1109/IPFA.2006.251016

C. Maiti, S. Mahato, A. Saha

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引用次数: 0

摘要

在本文中，我们首次通过计算机辅助设计(TCAD)技术证明了工艺诱导应变- si mosfet的交流和直流性能优于块体硅，并比较了工艺诱导应变- si mosfet和衬底诱导应变- si mosfet。此外，我们利用TCAD研究了在衬底应变(SS)和工艺诱导应变(PSS)两种工艺流程下制备的应变si n- mosfet的热电子降解特性。本文还报道了SS和PSS应力对n- mosfet高垂直电场迁移率和阈值电压漂移的影响

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Simulation Study of Hot-electron Reliability in strained-Si n-MOSFETs

In this paper, we demonstrate for the first time via technology computer aided design (TCAD), the enhancement in both the ac and dc performances for process-induced strained-Si MOSFETs over bulk-Si and a comparison of process-induced strained and substrate-induced strained-Si MOSFETs. In addition, we present the hot-electron degradation characteristics for strained-Si n-MOSFETs fabricated in both the substrate strain (SS) and process-induced strain (PSS) process flows via TCAD. Effects of both the SS and PSS stress on high vertical electric field mobility and threshold voltage shift in n-MOSFETs are also reported

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2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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