Kidoguchi, I. Adachi, S. Kamiyama, T. Fukuhisa, P. Mannoh, A. Takamori, T. Uenoyama
{"title":"具有高掺杂饱和吸收(HDSA)层的低噪声650nm波段AlGaInP可见光激光器","authors":"Kidoguchi, I. Adachi, S. Kamiyama, T. Fukuhisa, P. Mannoh, A. Takamori, T. Uenoyama","doi":"10.1109/IEDM.1995.499284","DOIUrl":null,"url":null,"abstract":"Self-sustained pulsating 650 nm-band AlGaInP visible laser diodes were successfully demonstrated by adopting novel structure, which has highly doped saturable absorbing layer. Short carrier lifetime, which is indispensable for pulsation, was realized by applying high doping concentration to the saturable absorbing layer. 500 /spl mu/m-long devices with 51%/51% coated facets were fabricated, resulting in the threshold current of 65 mA at room temperature. The relative intensity noise was below -134 dB/Hz in the temperature ranging from 20 to 60/spl deg/C at 5 mW.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Low-noise 650 nm-band AlGaInP visible lasers with highly-doped saturable absorbing (HDSA) layer\",\"authors\":\"Kidoguchi, I. Adachi, S. Kamiyama, T. Fukuhisa, P. Mannoh, A. Takamori, T. Uenoyama\",\"doi\":\"10.1109/IEDM.1995.499284\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Self-sustained pulsating 650 nm-band AlGaInP visible laser diodes were successfully demonstrated by adopting novel structure, which has highly doped saturable absorbing layer. Short carrier lifetime, which is indispensable for pulsation, was realized by applying high doping concentration to the saturable absorbing layer. 500 /spl mu/m-long devices with 51%/51% coated facets were fabricated, resulting in the threshold current of 65 mA at room temperature. The relative intensity noise was below -134 dB/Hz in the temperature ranging from 20 to 60/spl deg/C at 5 mW.\",\"PeriodicalId\":137564,\"journal\":{\"name\":\"Proceedings of International Electron Devices Meeting\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1995.499284\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.499284","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Self-sustained pulsating 650 nm-band AlGaInP visible laser diodes were successfully demonstrated by adopting novel structure, which has highly doped saturable absorbing layer. Short carrier lifetime, which is indispensable for pulsation, was realized by applying high doping concentration to the saturable absorbing layer. 500 /spl mu/m-long devices with 51%/51% coated facets were fabricated, resulting in the threshold current of 65 mA at room temperature. The relative intensity noise was below -134 dB/Hz in the temperature ranging from 20 to 60/spl deg/C at 5 mW.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
