三维模堆中硅通孔垂直过渡的电传输特性

K. Chang, R. Weerasekera, S. Bhattacharya
{"title":"三维模堆中硅通孔垂直过渡的电传输特性","authors":"K. Chang, R. Weerasekera, S. Bhattacharya","doi":"10.1109/EPTC.2015.7412339","DOIUrl":null,"url":null,"abstract":"Two vertical transitions with through silicon vias (TSVs) in 3D die stack are designed and their high frequency electrical characteristics are presented in this paper. The two vertical transitions consist of TSVs for obtaining electrical connection between the die front side and back side. Back side redistribution layer is eliminated in the designs to simplify the fabrication process without sacrificing the electrical performance. Design considerations and guidelines are provided to design high speed TSV structure up to 50 GHz. Different kinds of transmission line interconnects (for instance, microstrip line and coplanar waveguide) are implemented at the input/output extensions for different applications. For both vertical transition designs, the simulated insertion loss is better than 0.65 dB up to 50 GHz while good impedance matching from DC to 50 GHz is obtained with the simulated return loss greater than 14 dB.","PeriodicalId":418705,"journal":{"name":"2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Electrical transmission characteristics of vertical transition with through silicon vias (TSVs) in 3D die stack\",\"authors\":\"K. Chang, R. Weerasekera, S. Bhattacharya\",\"doi\":\"10.1109/EPTC.2015.7412339\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two vertical transitions with through silicon vias (TSVs) in 3D die stack are designed and their high frequency electrical characteristics are presented in this paper. The two vertical transitions consist of TSVs for obtaining electrical connection between the die front side and back side. Back side redistribution layer is eliminated in the designs to simplify the fabrication process without sacrificing the electrical performance. Design considerations and guidelines are provided to design high speed TSV structure up to 50 GHz. Different kinds of transmission line interconnects (for instance, microstrip line and coplanar waveguide) are implemented at the input/output extensions for different applications. For both vertical transition designs, the simulated insertion loss is better than 0.65 dB up to 50 GHz while good impedance matching from DC to 50 GHz is obtained with the simulated return loss greater than 14 dB.\",\"PeriodicalId\":418705,\"journal\":{\"name\":\"2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC)\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPTC.2015.7412339\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2015.7412339","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

设计了三维叠片中两种带硅通孔的垂直跃迁,并分析了它们的高频电特性。两个垂直过渡由tsv组成,用于在模具正面和背面之间获得电气连接。为了在不牺牲电性能的前提下简化制造工艺,在设计中消除了背面再分布层。给出了50ghz高速TSV结构的设计注意事项和指导原则。不同类型的传输线互连(例如,微带线和共面波导)在输入/输出扩展实现不同的应用。两种垂直过渡设计在50 GHz范围内的模拟插入损耗均优于0.65 dB,在直流至50 GHz范围内的阻抗匹配良好,模拟回波损耗均大于14 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrical transmission characteristics of vertical transition with through silicon vias (TSVs) in 3D die stack
Two vertical transitions with through silicon vias (TSVs) in 3D die stack are designed and their high frequency electrical characteristics are presented in this paper. The two vertical transitions consist of TSVs for obtaining electrical connection between the die front side and back side. Back side redistribution layer is eliminated in the designs to simplify the fabrication process without sacrificing the electrical performance. Design considerations and guidelines are provided to design high speed TSV structure up to 50 GHz. Different kinds of transmission line interconnects (for instance, microstrip line and coplanar waveguide) are implemented at the input/output extensions for different applications. For both vertical transition designs, the simulated insertion loss is better than 0.65 dB up to 50 GHz while good impedance matching from DC to 50 GHz is obtained with the simulated return loss greater than 14 dB.
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